Dislocation reduction in GaN film using Ga-lean GaN buffer layer and migration enhanced epitaxy
نویسندگان
چکیده
a Department of Materials Science and Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan b Department of Electronics Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan c Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, VA 24061, USA d Department of Electrophysics, National Chiao Tung University, 1001 Ta Hsueh Rd., 30010 Hsinchu, Taiwan e ULVAC Taiwan Inc., 8F., No. 5, Keji Rd., Hsinchu Science Park, Hsinchu 30078, Taiwan f College of Photonic, National Chiao Tung University at Tainan, 71150, Taiwan g Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
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